Course Objectives
As a basic knowledge in solid physics, the goal is to understand and explain the following items.
· Temperature dependence of electrical resistance of extrinsic semiconductor
· Hall effect measurement
· Crystal structure factor
· Calculation method of diffraction intensity of body-centered and face-centered cubic lattice
Rubric
| Ideal Level of Achievement | Standard Level of Achievement | Unacceptable Level of Achievement) |
Evaluation 1 | It is possible to explain the temperature dependence of electrical resistance of extrinsic semiconductor perfectly | It is possible to explainthe temperature dependence of electrical resistance of extrinsic semiconductor | It is impossible to explain the temperature dependence of electrical resistance of extrinsic semiconductor |
Evaluation 2 | Understand the Hall effect measurement perfectly | Understand the Hall effect measurement | Misunderstand the Hall effect measurement |
Evaluation 3 | Students can explain X-ray diffraction and structure factor perfectly | Students can correctly explain X-ray diffractions and structure factors | Students can not explain X-ray diffraction and structure factor |
Evaluation 4 | Students can explain the electronic structure of semiconductors perfectly | Students can correctly explain the electronic structure of
semiconductors | Students can not explain the electronic structure of semiconductors |
Assigned Department Objectives
Learning and Educational Objectives of the “General Engineering” A-2
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JABEE 1(2)(d)(1)
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JABEE 1(2)(d)(2)
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JABEE 2.1(1)
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Diploma policy 1
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Teaching Method
Outline:
Students will learn the X-ray diffraction method, which is one of the methods for evaluating crystal structures.
Students will learn about the electrical properties and electronic structures of semiconductors used in computers, cellular phones, and LEDs.
Style:
Evaluate the student’s degree of comprehension according to the form of lecture and exercise, and in principle proceed according to the lesson plans.
(May sometimes change according to student’s degree of understanding.)
Notice:
Can take makeup exam in need aid up to maximum of 60 points.
Characteristics of Class / Division in Learning
Course Plan
|
|
|
Theme |
Goals |
2nd Semester |
3rd Quarter |
1st |
Guidance How to proceed with this lecture Review on materials science |
Explain the role of "solid" in materials science
|
2nd |
n-type semiconductor and p-type semiconductor |
It is possible to explain n-type semiconductor and p-type semiconductor
|
3rd |
Temperature dependence of electrical resistance of extrinsic semiconductor |
It is possible to explain the temperature dependence of electrical resistance of extrinsic semiconductor
|
4th |
Defective semiconductor |
It is possible to describe the defective semiconductor
|
5th |
Law of mass action |
It is possible to explain the Law of mass action
|
6th |
Hall effect measurement |
It is possible to explain Hall effect measurement
|
7th |
Applications using pn junctions |
It is possible to explain applications using pn junctions
|
8th |
Midterm exam |
|
4th Quarter |
9th |
X-ray |
Understand the type of radiation, its effects on human bodies, and related laws and regulations
|
10th |
X-ray diffraction 1 |
It is possible to calculate the lattice parameter from the spacing d between adjacent (hkℓ) lattice planes
|
11th |
X-ray diffraction 2 |
It is possible to explain the structure factor
|
12th |
X-ray diffraction 3 |
It is possible to calculate the systematic absences
|
13th |
X-ray diffraction 4 |
It is possible to calculate the systematic absences
|
14th |
X-ray diffraction 5 |
It is possible to calculate the intensity of X ray diffraction
|
15th |
Final exam |
|
16th |
Return exam papers Explanation of exam Class questionnaire |
|
Evaluation Method and Weight (%)
| Examination | Portfolio | Total |
Subtotal | 60 | 40 | 100 |
Basic Ability | 40 | 20 | 60 |
Technical Ability | 20 | 20 | 40 |