Course Objectives
1. Explain bias current of pn junction (step junction)
2. Explain the difference between Schottky contact and ohmic contact
3. Explain the basic structure of integrated circuits and the basis of fabrication technology
Rubric
| Ideal Level of Achievement | Standard Level of Achievement | Unacceptable Level of Achievement) |
| Evaluation 1 | Bias current of pn junction (step junction) can be correctly explained | Bias current of pn junction (step junction) can be explained | Bias current of pn junction (step junction) can not be explained |
| Evaluation 2 | Can correctly explain the difference between Schottky contact and ohmic contact | Can explain the difference between Schottky contact and ohmic contact | Can't explain the difference between Schottky contact and ohmic contact |
| Evaluation 3 | Can correctly explain the basic structure of integrated circuits and the basis of fabrication technology | Can explain the basic structure of integrated circuits and the basis of fabrication technology | Can't explain the basic structure of integrated circuits and the basis of fabrication technology |
Assigned Department Objectives
学習・教育到達度目標 A-6
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JABEE 1(2)(d)(1)
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JABEE 1(2)(e)
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ディプロマポリシー 1
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Teaching Method
Outline:
1. Explain bias current of pn junction (step junction)
2. Explain the difference between Schottky contact and ohmic contact
3. Explain the basic structure of integrated circuits and the basis of fabrication technology
Style:
Lecture and exercise. Appropriate time for exercises.
Notice:
The lesson plans may change depending on students' understanding level
Course Plan
|
|
|
Theme |
Goals |
| 2nd Semester |
| 3rd Quarter |
| 1st |
Electrical conduction of semiconductor |
Knowing the electrical conduction of extrinsic semiconductors
|
| 2nd |
Rectifying property of pn junction |
Knowing the operation of pn junction
|
| 3rd |
Rectifying property of pn junction |
Understand the relationship between carrier mobility and energy band structure in pn junction
|
| 4th |
Voltage / current characteristics of pn junction |
Know basic equations on the relationship between voltage and current of pn junction (step junction)
|
| 5th |
Voltage / current characteristics of pn junction |
Understand the relational expression between voltage and current of pn junction
|
| 6th |
Voltage / current characteristics of pn junction |
Quantitatively shows the relationship between voltage and current of pn junction. Know the difference with actual devices such as yield phenomenon.
|
| 7th |
Intermediate exam |
Solve intermediate exam
|
| 8th |
Answer of the intermediate exam, voltage-current characteristics of pn junction |
Know the relationship between voltage and current of pn junction and minority carrier accumulation effect
|
| 4th Quarter |
| 9th |
Metal semiconductor junction |
About the difference between Schottky barrier contact and ohmic contact, and its operation is shown by drawing an energy band diagram
|
| 10th |
Photoelectric conversion solid state device |
Know the relationship between photoelectric energy conversion and pn junction
|
| 11th |
Photoelectric conversion solid state device |
Know how to use photoelectric energy conversion element
|
| 12th |
Bipolar transistor |
Understand the operation of bipolar transistor with energy band diagram
|
| 13th |
Field effect transistor |
Understand the operation of the field effect transistor using the energy band diagram
|
| 14th |
Manufacture of semiconductor devices and integrated circuits |
Know the basics of integrated circuit fabrication technology
|
| 15th |
Final exam |
To solve the final exam
|
| 16th |
Answer of the final exam, questionnaire |
Return papers
|
Evaluation Method and Weight (%)
| Examination | Presentation | Mutual Evaluations between students | Behavior | Portfolio | Other | Total |
| Subtotal | 70 | 0 | 0 | 0 | 0 | 30 | 100 |
| Basic Ability | 0 | 0 | 0 | 0 | 0 | 0 | 0 |
| Technical Ability | 70 | 0 | 0 | 0 | 0 | 30 | 100 |
| Interdisciplinary Ability | 0 | 0 | 0 | 0 | 0 | 0 | 0 |